![band gap ground state valence band cut off wavelength band gap ground state valence band cut off wavelength](https://image2.slideserve.com/4495263/examples-of-photon-absorption-l.jpg)
![band gap ground state valence band cut off wavelength band gap ground state valence band cut off wavelength](https://ars.els-cdn.com/content/image/3-s2.0-B0123694019004605-gr6.jpg)
Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US201562387207P priority Critical Priority to US15/059,354 priority patent/US10027159B2/en Application filed by Energous Corp filed Critical Energous Corp Priority to US16/038,106 priority patent/US10491029B2/en Publication of US20190052115A1 publication Critical patent/US20190052115A1/en Application granted granted Critical Publication of US10491029B2 publication Critical patent/US10491029B2/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee Energous Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Alister Hosseini Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number US16/038,106 Other versions US10491029B2 This work was performed under ContractNo. Based on the experimental results, it was concluded that WSe(,2) is an indirect band gap material *DOE Report IS-T-1045. Polycrystalline samples of n-WSe(,2) were also studied as photoanodes in such a cell, but their performance is poor, compared with that of single crystals, because defects, such as steps on the crystal surface and grain boundaries, act as recombination centers Transmission spectra of single crystals of WSe(,2) were studiednear the fundamental absorption edge. An efficiency as high as 10.2% was achieved for an n-WSe(,2)/I('-)-I(,3)('-)/Pt cell, and 9.4% when MoSe(,2) was used. It was found that WSe(,2) is the best photoelectrode material of all, and the redox couple, I('-)/I(,3)('-), provides a fast-kinetics path for electron transfer. The resistivity anisotropy of these two compounds is small, compared to that reported on natural single crystals of MoS(,2) Single crystals of n-type WSe(,2), MoSe(,2), WS(,2), and MoS(,2) were employed as photoanodes in a photoelectrochemical solar cell with a variety of redox couples as the charge-transfer agents. The resistivity parallel to the c-axis was also studied on single crystals of WSe(,2) and MoSe(,2). For WS(,2) and MoS(,2), the results were not as consistent as those for WSe(,2) and MoSe(,2) because of poorer crystal quality. The electron Hall mobility of these two compounds depends strongly on temperature. It was found that a single donor energy level can be assigned to the crystals of WSe(,2) and MoSe(,2), even for crystals from different growth ampoules. The electrical resistivity and Hall effect perpendicular to the c-axis of single crystals of n-type WSe(,2), MoSe(,2), WS(,2), and MoS(,2) were studied in the extrinsic conduction temperature range (77 K to 300 K).